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71.
《Physics letters. A》2020,384(25):126484
We consider a soluble covariant extension of the two-dimensional Dirac oscillator (2D DO), which breaks the infinite degeneracy of the energy spectrum. The energy eigenvalues and the corresponding eigenstates of the system are obtained algebraically using chiral creation and annihilation operators. The effect of the coupling to an external constant transverse magnetic field is investigated. The connection with Jaynes-Cummings (JC) and Anti-Jaynes-Cummings (AJC) models of quantum optics, and other features of the system are also discussed. 相似文献
72.
《Physics letters. A》2020,384(29):126757
The bending and torsional vibration of the periodic perpendicular cantilever beam-mass resonators (PCBMR) is idealized as translational and rotational oscillators attached to the main beam. In this paper, the effect of that torsional vibration of the PCBMR on the dynamics of an infinitely long Euler-Bernoulli beam is evaluated. The band-structure is explored by implementing the transfer matrix method in conjunction with Bloch-Floquet's theorem. The combination of the translational and rotational oscillator modifies the relative position of the coupling coefficient in the transfer matrix, which plays a pivotal role in the band-gap formation. The flexural band-structure is highly sensitive to the torsional vibration while the radius of gyration of the tip mass is considerably higher than the length of the PCBMR. Ill-tuning leads to split and reduction of attenuation band to 50%; whereas, around 38% elongation of the attenuation band in the low frequency regime can be achieved by proper tuning. 相似文献
73.
《Physics letters. A》2020,384(32):126832
We propose a novel method for detection of the faint machinery vibration at the nanometer resolution based on the spin magnetic resonant effect. A suspension magnet acts as a vibration sensor to transfer the vibration signals as the magnetic field fluctuation to excite the spin magnetic resonance. Due to the high sensitivity of the magnetic field of the nitrogen-vacancy center in diamond, the theoretical detection limit of mechanical vibration is as high as 5.7 nm, and the actual measurement resolution reached 12.8 nm, and proved the potential for further improvement to ∼pm resolution. The feasibility of this method is verified by dynamic tests. This method provides a novel approach for the detection of micro-mechanical vibrations. 相似文献
74.
超空泡射弹侵彻问题的实质是特殊水下结构受到高速冲击载荷作用下的动态响应。对12.7 mm口径超空泡射弹侵彻典型水下目标壳体的毁伤效果开展研究,基于LS-DYNA有限元分析软件建立水环境中超空泡射弹垂直侵彻曲面靶板的等效模型,探讨射弹侵彻过程中动能侵彻和气泡溃灭对靶板联合毁伤效果,获得了靶板在各阶段的应力变化和结构变形规律。结果表明:侵彻靶板前,射弹着靶速度为200 m/s时的头部表面水介质压力峰值达768 N,靶板表面有明显下凹变形;侵彻靶板时,伴随着射弹动能侵彻和气泡溃灭冲击,水介质造成的影响不足动能侵彻的2%;侵彻靶板后,在靶板正面形成峰值速度为42 m/s的水射流进一步作用于破口;靶板整体弯曲变形,在200~300 m/s范围内,随着射弹着靶速度的增加,靶板弯曲形变量减小;靶板局部发生延性穿孔,射弹在水环境中具有更好的破口效果,射弹速度变化对破口尺寸影响不大。 相似文献
75.
提出了一种求解传输线方程的高精度龙格-库塔(RK)方法。此方法在空间上采取高阶泰勒展开,提高了对空间微分的近似精度,减少了数值色散所带来的误差。与传统的时域有限差分法(FDTD)方法相比,在每波长采样数相同时,RK方法的计算精度更高。同时,根据Taylor模型,对外界平面波激励源进行离散,成功利用RK方法对外部场激励传输线进行求解,扩大了龙格-库塔方法在求解传输线方程时的应用范围。通过编程对平面波辐照下无限大地平面上的单导体与双导体的算例分别应用FDTD方法与RK方法进行了计算,验证了RK方法的正确性。结果表明同等计算条件下RK方法的计算精度更高。 相似文献
76.
根据ITO/Au纳米核壳二聚体粒子在生物医学领域的应用合理性,设计了一种实时检测生物液体的核壳二聚体探针消光式传感器;由偶极子理论推导出输出波长与外界环境折射率关系;利用MATLAB设计ITO/Au纳米核壳二聚体粒子结构;采用软件DDSCAT7.3结合离散偶极近似法,利用二聚体有效半径模拟计算了300~950nm可见光到红外光波段不同核壳比、二聚体间距、以及不同介质折射率的消光光谱;根据传感芯片折射率与偶极共振、耦合八级共振的响应关系得出ITO/Au二聚体的折射率灵敏特性。与传统Ag/Au核壳纳米粒子相比,ITO/Au纳米核壳二聚体结构引入了可作为传感芯片灵敏性自参考参数的耦合八级共振峰,同时ITO/Au二聚体结构的折射率灵敏度可达到419nm/RIU。这些工作及其结果对制作消光式传感器具有重要的意义。 相似文献
77.
利用有限元法和动力平衡原理,建立了具有层间接触的沥青路面和13个自由度的大型客车人体三维模型。以不平顺作为激励,随机模拟车流分布,在不同制动情况下,从时域和频域两方面分析人-车-路耦合振动下车辆和人体的动力响应。时域分析采用客观评价标准和主观烦恼率相结合的方法,频域分析考虑人体共振、人的心理和生理因素。结果表明:随着制动力增大,人体的竖向加速度幅值不变,俯仰、侧倾加速度幅值都增大,但是俯仰加速度增幅远大于侧倾加速度的情况,人的舒适性变差,烦恼率增高;在紧急制动时,主频段对人体共振、心理和生理产生的影响很小,但是次主频段与人体某些器官固有频段重合,对人体共振、心理和生理产生的影响是不容忽视的。 相似文献
78.
79.
《Journal of Saudi Chemical Society》2020,24(10):754-764
A kinetic study of the reactions of potentially bioactive 2-amino-4-arylthiazoles with highly reactive 4,6-dinitrobenzofuroxan (DNBF) is reported herein in acetonitrile solution. The complexation reaction was followed by recording the UV–vis spectra with time at λmax = 482 nm. Electronic effects of substituents influencing the rate of reaction have been studied using structure-reactivity relationships. It is shown that the Hammett plot relative to the reaction of DNBF with 2-amino-4-(4-chlorophenyl)thiazole exhibit positive deviation from the log k1 versus σ correlation, while it showed excellent linear correlation in terms of Yukawa–Tsuno equation. It has be noticed that the nonlinear Hammett plot observed for 2-amino-4-(4-chlorophenyl) thiazole is not attributed to a change in rate-determining step but is due to nature of electronic effect of substituent caused by the resonance of stabilization of substrates. The second-order rate constant (k1) relating to the bond C–C and C-N forming step of the complexation processes of DNBF with 4-substituted-aminothiazoles and 2-amino-5-methyl-4-phenylthiazole, respectively, is fit into the linear relationship log k = sN (N + E), thereby permitting the assessment of the nucleophilicity parameter (N) of the 2-amino-4-arylthiazoles of the range (4.90 < N < 6.85). 2-amino-4-arylthiazoles is subsequently ranked by positioning its reactivity on the general nucleophilicity scale developed recently by Mayr and coworkers (2003) leading an interesting and a direct comparison over a large domain of π-, σ -, and n-nucleophiles. The global electrophilicity/nucleophilicity reactivity indexes of the 2-amino-4-arylthiazoles have been investigated by means of a density functional theory (DFT) method. . 相似文献
80.
Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×1015 cm-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA. 相似文献